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| Datasheet File OCR Text: |
| NTE2387 MOSFET N-Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain-Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Drain-Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Pulsed Drain Current, IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Continuous Drain Current, ID TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Total Dissipation (TC = +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Maximum Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W Typical Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Static Characteristics Drain-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS IGSS VGS(th) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf VDD = 30V, ID = 2.3A, VGS = 10V, RGS = 50, Rgen = 50 ID = 250A, VGS = 0 VGS = 0, VDS = 800V, TC = +25C VGS = 0, VDS = 800V, TC = +125C Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On Resistance Dynamic Characteristics Forward Transconductance Input Capactiance Output Capacitance Reverse Transfer Capactiance Turn-On Time Rise Time Turn-Off Delay Time Fall Time VDS = 25V, ID = 1.5A VDS = 25V, VGS = 0, f = 1MHz 3.0 - - - - - - - 4.3 1000 80 30 10 25 130 40 - 1250 120 50 25 40 150 60 mho pf pf pf ns ns ns ns VDS = 0, VGS = 30V VDS = VGS, ID = 1mA VGS = 10V, ID = 1.5A 800 - - - 2.1 - - 2 0.1 10 3.0 2.7 - 20 1.0 100 4.0 3.0 V A mA nA V Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Dynamic Characteristics (Cont'd) Internal Drain Inductance LD Measured from contact screw on tab to center of die Measured from drain lead 6mm from package to center of die Internal Source Inductance LS Measured from the source lead 6mm from package to source bonding pad - - - 3.5 4.5 7.5 - - - nH nH nH Symbol Test Conditions Min Typ Max Unit Source-Drain Diode Ratings and Characteristics Continuous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward Voltage Reverse Recovery Time Reverse Recovered Charge IDR IDRM VSD trr Qrr IF = 4A, VGS = 0 IF = 4A, diF/dt = 100A/s, VGS = 0, VR = 100V - - - - - - - 1.0 1800 12 4 16 1.3 - - A A V ns C .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain/Tab |
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